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    2003 Aug 20 3 NXP Semiconductors Product data sheet Schottky barrier diode 1PS10SB82 ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. Note 1. Pulse test: tp = 300 μs; δ = 0.02. THERMAL CHARACTERISTICS Note 1. Refer to SOD882 standard mounting conditions (footprint), FR4 with 60 μm copper strip line. Soldering Reflow soldering is the only recommended soldering method. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VF forward voltage see Fig.2 IF = 1 mA ? 340 mV IF = 30 mA ? 700 mV rD differential diode forward resistance f = 1 MHz; IF = 5 mA; see Fig.5 12 ? Ω IR continuous reverse current VR = 1 V; see Fig.3; note 1 ? 0.2 μA Cd diode capacitance VR = 0 V; f = 1 MHz; see Fig.4 1 ? pF SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 500 K/W |